Tadao Hashimoto, Ph.D
Tadao Hashimoto joined Professor Matsunami's laboratory
at Kyoto University in 1990.
His research covered plasma-assisted chemical vapor deposition
(CVD) of amorphous silicon carbide for solar cells and
photo-assisted metalorganic molecular beam epitaxy (MOMBE)
of gallium phosphide. He was awarded bachelor of electrical
engineering in 1991 and master of electrical engineering in 1993
from Kyoto University.
In 1993, he joined Panasonic and worked for 6 years
as a research engineer of semiconductor lasers and
metal organic chemical vapor deposition (MOCVD)
of GaAs-based alloys and GaN-based alloys.
From 1997 to 1999, he stayed at Stanford University as
a visiting researcher working on hydride vapor
phase epitaxy (HVPE) of GaN. In 1999 he left Panasonic and
in 2000 he started his Ph.D study at the University of California,
Santa Barbara. He joined the ERATO Nakamura Inhomogeneous
Crystal Project and started research on the ammonothermal
growth of GaN. In 2005, he was awarded Ph.D in materials
science from UCSB and continued his research on the ammonothermal
growth at UCSB. In 2007, he received Outstanding
Research Achievement Award form Solid State Lighting and Display
Center at UCSB. He is the founder of SixPoint Materials, Inc.