Tadao Hashimoto

Tadao Hashimoto, Ph.D

Tadao Hashimoto joined Professor Matsunami's laboratory at Kyoto University in 1990. His research covered plasma-assisted chemical vapor deposition (CVD) of amorphous silicon carbide for solar cells and photo-assisted metalorganic molecular beam epitaxy (MOMBE) of gallium phosphide. He was awarded bachelor of electrical engineering in 1991 and master of electrical engineering in 1993 from Kyoto University. In 1993, he joined Panasonic and worked for 6 years as a research engineer of semiconductor lasers and metal organic chemical vapor deposition (MOCVD) of GaAs-based alloys and GaN-based alloys. From 1997 to 1999, he stayed at Stanford University as a visiting researcher working on hydride vapor phase epitaxy (HVPE) of GaN. In 1999 he left Panasonic and in 2000 he started his Ph.D study at the University of California, Santa Barbara. He joined the ERATO Nakamura Inhomogeneous Crystal Project and started research on the ammonothermal growth of GaN. In 2005, he was awarded Ph.D in materials science from UCSB and continued his research on the ammonothermal growth at UCSB. In 2007, he received Outstanding Research Achievement Award form Solid State Lighting and Display Center at UCSB. He is the founder of SixPoint Materials, Inc.

Edward Letts

Vice President in Technology
Edward Letts, Ph.D

Edward Letts joined Professor Pierre Petroff's laboratory in UCSB as an undergraduate from 1997-2001. He studied InAs quantum dot layers grown on GaAs using molecular beam epitaxy. In 2001 he graduated with honors and was awarded a bachelor of Physics from the College of Creative Studies at UCSB. Later that year he started his Ph.D. study at UCSB under the guidance of Professor Shuji Nakamura. He researched the bulk crystal growth of AlN using a sublimation technique. In 2007 he was awarded his Ph.D in material science from UCSB. He is the cofounder SixPoint Materials.